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512K x 36, 1M x 18 2.5V Synchronous ZBTTM SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
x x
IDT71T75602 IDT71T75802
Features
512K x 36, 1M x 18 memory configurations Supports high performance system speed - 225 MHz (3.0 ns Clock-to-Data Access) ZBTTM Feature - No dead cycles between write and read cycles Internally synchronized output buffer enable eliminates the need to control OE Single R/W (READ/WRITE) control pin Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications 4-word burst capability (interleaved or linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 2.5V power supply (5%) 2.5V I/O Supply (VDDQ) Power down controlled by ZZ input Boundary Scan JTAG Interface (IEEE 1149.1 Compliant) Packaged in a JEDEC standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA)
Description
The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit (18 Megabit) synchronous SRAMs. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround. Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or write. The IDT71T75602/802 contain data I/O, address and control signal registers. Output enable is the only asynchronous signal and can be used to disable the outputs at any given time. A Clock Enable CEN pin allows operation of the IDT71T75602/802 to be suspended as long as necessary. All synchronous inputs are ignored when (CEN) is high and the internal device registers will hold their previous values. There are three chip enable pins (CE1, CE2, CE2) that allow the user to deselect the device when desired. If any one of these three is not asserted when ADV/LD is low, no new memory operation can be initiated.
x
x
x x
x x x x x x x x
Pin Description Summary
A0-A19 CE1, CE2, CE2 OE R/W CEN BW1, BW2, BW3, BW4 CLK ADV/LD LBO TMS TDI TCK TDO TRST ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS Address Inputs Chip Enables Output Enable Read/Write Signal Clock Enable Individual Byte Write Selects Clock Advance burst address / Load new address Linear / Interleaved Burst Order Test Mode Select Test Data Input Test Clock Test Data Input JTAG Reset (Optional) Sleep Mode Data Input / Output Core Power, I/O Power Ground Input Input Input Input Input Input Input Input Input Input Input Input Output Input Input I/O Supply Supply Synchronous Synchronous Asynchronous Synchronous Synchronous Synchronous N/A Synchronous Static N/A N/A N/A N/A Asynchronous Synchronous Synchronous Static Static
MAY 2003
1
(c)2002 Integrated Device Technology, Inc. DSC-5313/07
5313 tbl 01
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Description (cont.)
However, any pending data transfers (reads or writes) will be completed. The data bus will tri-state two cycles after the chip is deselected or a write is initiated. The IDT71T75602/802 have an on-chip burst counter. In the burst mode, the IDT71T75602/802 can provide four cycles of data for a single address presented to the SRAM. The order of the burst sequence is defined by the LBO input pin. The LBO pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new external address (ADV/LD = LOW) or increment the internal burst counter (ADV/LD = HIGH). The IDT71T75602/802 SRAMs utilize IDT's latest high-performance 2.5V CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm 100pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA).
Pin Definitions(1)
Symbol A0-A19 ADV/LD Pin Function Address Inputs Advance / Load I/O I I Active N/A N/A Description Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK, ADV/LD low, CEN low, and true chip enables. ADV/LD is a synchronous input that is used to load the internal registers with new address and control when it is sampled lo w at the rising edge of clock with the chip selected. When ADV/LD is low with the chip deselected, any burst in progress is terminated. When ADV/LD is sampled high then the internal burst counter is advanced for any burst that was in progress. The external addresses are ignored when ADV/LD is sampled high. R/W signal is a synchronous input that identifies whether the current load cycle initiated is a Read or Write access to the memory array. The data bus activity for the current cycle takes place two clock cycles later. Synchronous Clock Enable Input. When CEN is sampled high, all other synchronous inputs, including clock are ignored and outputs remain unchanged. The effect of CEN sampled high on the device outputs is as if the low to high clock transition did not occur. For normal operation, CEN must be sampled low at rising edge of clock. Synchronous byte write enables. Each 9-bit byte has its own active low byte write enable. On load write cycles (when R/W and ADV/LD are sample d low) the appropriate byte write signal (BW1-BW4) must be valid. The byte write signal must also be valid on each cycle of a burst write. Byte Write signals are ignored when R/ W is sampled high. The appropriate byte(s) of data are written into the device two cycles later. BW1-BW4 can all be tied low if always doing write to the entire 36-bit word. Synchronous active low chip enable. CE1 and CE2 are used with CE2 to enable the IDT71T75602/802 (CE1 or CE2 sampled high or CE2 sampled low) and ADV/LD low at the rising edge of clock, initiates a deselect cycle. The ZBTTM has a two cycle de select, i.e., the data bus will tri-state two clo ck cycles after deselect is initiated. Synchronous active high chip enable. CE2 is used with CE1 and CE2 to enable the chip. CE2 has inverted polarity but otherwise identical to CE1 and CE2. This is the clock input to the IDT71T75602/802. Except for OE, all timing references for the device are made with respect to the rising edge of CLK. Synchronous data input/output (I/O) pins. Both the data input path and data output path are reg istered and triggered by the rising edge of CLK. Burst order selection input. When LBO is high the Interleaved burst sequence is sele cted. When LBO is low the Linear burst sequence is selected. LBO is a static input and it must not change during device operation. Asynchronous output enable . OE must be low to read data from the 71T75602/802. Whe n OE is high the I/O pins are in a high-imped ance state.OE does not need to be actively controlled for read and write cycles. In normal operation, OE can be tied low. Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup. Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an internal pullup. Clock input of TAP controller. Each TAP event is clocked. Test inp uts are captured on rising edge of TCK, while test outputs are d riven from the falling edge of TCK. This pin has an internal pullup. Serial output of registers placed between TDI and TDO. This output is active depending on the state of the TAP controller. Optional asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used TRST can be left floating. This pin has an internal pullup. Only available in BGA package. Synchro nous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71T75602/802 to its lowest power consumption level. Data retentio n is guaranteed in Sleep Mode. This pin has an internal pulldown. 2.5V core power supply. 2.5V I/O Supply. Ground.
5313 tbl 02
R/W CEN
Read / Write Clock Enable
I I
N/A LOW
BW1-BW4
Individual Byte Write Enables
I
LOW
CE1, CE2
Chip Enables
I
LOW
CE2 CLK I/O0-I/O31 I/OP1-I/OP4 LBO OE
Chip Enable Clock Data Input/Output Linear Burst Order Output Enable
I I I/O I I
HIGH N/A N/A LOW LOW
TMS TDI TCK TDO
Test Mode Select Test Data Input Test Clock Test Data Output JTAG Reset (Optional) Sleep Mode Power Supply Power Supply Ground
I I I O
N/A N/A N/A N/A
TRST
I
LOW
ZZ VDD VDDQ VSS
I N/A N/A N/A
HIGH N/A N/A N/A
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK. 6.42 2
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO Address A [0:18] CE1, CE2, CE2 R/W CEN ADV/LD BWx
D Clk D Q Control D Q
512Kx36 BIT MEMORY ARRAY
Address
Input Register
DI
DO
Q
Control Logic
Mux
Sel
D Clk
Clock
Output Register Q
OE TMS TDI TCK TRST (optional)
Gate
5313 drw 01
,,
JTAG
TDO
Data I/O [0:31], I/O P[1:4]
LBO Address A [0:19] CE1, CE2, CE2 R/W CEN ADV/LD BWx
D Clk D Q D Q
1Mx18 BIT MEMORY ARRAY
Address
Control
Input Register
DI
DO
Q
Control Logic
Mux
Sel
D Clk
Clock
Output Register Q
OE
Gate
5313 drw 01b
(optional)
TMS TDI TCK TRST
, ,
JTAG
TDO
Data I/O [0:15], I/O P[1:2]
6.42 3
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Recommended DC Operating Conditions
Symbol VDD VDDQ VSS VIH VIH VIL Parameter Core Supply Voltage I/O Supply Voltage Ground Input High Voltage - Inputs Input High Voltage - I/O Input Low Voltage Min. 2.375 2.375 0 1.7 1.7 -0.3(1) Typ. 2.5 2.5 0
____ ____ ____
Recommended Operating Temperature and Supply Voltage
Max. 2.625 2.625 0 Unit V V V V V V
5313 tbl 03
Grade Commercial Industrial
Temperature(1) 0C to +70C -40C to +85C
VSS 0V 0V
VDD 2.5V5% 2.5V5%
VDDQ 2.5V5% 2.5V5%
5313 tbl 05
VDD +0.3 VDDQ+0.3 0.7
NOTE: 1. TA is the "instant on" case temperature.
NOTE: 1. VIL (min.) = -0.8V for pulse width less than tCYC/2, once per cycle.
Pin Configuration 512K x 36
BW3 BW2 BW1 CE2 A7 CE1 VDD VSS CLK R/W CEN CE2 BW4 OE ADV/LD A18 A17 A8 A9 A6
I/OP3 I/O16 I/O17 VDDQ VSS I/O18 I/O19 I/O20 I/O21 VSS VDDQ I/O22 I/O23 VDD(1) VDD VDD(1) VSS I/O24 I/O25 VDDQ VSS I/O26 I/O27 I/O28 I/O29 VSS VDDQ I/O30 I/O31 I/OP4
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
5313 drw 02
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
I/OP2 I/O15 I/O14 VDDQ VSS I/O13 I/O12 I/O11 I/O10 VSS VDDQ I/O9 I/O8 VSS VDD(1) VDD ZZ I/O7 I/O6 VDDQ VSS I/O5 I/O4 I/O3 I/O2 VSS VDDQ I/O1 I/O0 I/OP1
,
LBO A5 A4 A3 A2 A1 A0 NC / TMS(2) NC / TDI(2) VSS VDD NC / TDO(2) NC / TCK(2,3)
A10 A11 A12 A13 A14 A15
Top View 100 TQFP
NOTES: 1. Pins 14, 16, and 66 do not have to be connected directly to VDD as long as the input voltage is VIH. 2. Pins 38, 39 and 43 will be pulled internally to VDD if not actively driven. To disable the TAP controller without interfering with normal operation, several settings are possible. Pins 38, 39 and 43 could be tied to VDD or VSS and pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK) pins 38, 39 and 43 could be left unconnected "NC" and the JTAG circuit will remain disabled from power up. 3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin TQFP package for the 36M ZBT device.
6.42 4
A16
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
OE ADV/LD A19
Pin Configuration 1Mx 18
CE2 NC NC BW2 BW1 CE2 A7 CE1 VDD VSS CLK R/W CEN A18 A8 A9 A6
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
Absolute Maximum Ratings(1)
Symbol VTERM
(2)
Rating Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature Power Dissipation DC Output Current
Commercial -0.5 to +3.6 -0.5 to VDD -0.5 to VDD +0.5 -0.5 to VDDQ +0.5 0 to +70 -55 to +125 -55 to +125 2.0 50
Industrial -0.5 to +3.6 -0.5 to VDD -0.5 to VDD +0.5 -0.5 to VDDQ +0.5 -40 to +85 -55 to +125 -55 to +125 2.0 50
Unit V V V V
o
NC NC NC VDDQ VSS NC NC I/O8 I/O9 VSS VDDQ I/O10 I/O11 VDD(1) VDD VDD(1) VSS I/O12 I/O13 VDDQ VSS I/O14 I/O15 I/OP2 NC VSS VDDQ NC NC NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A10 NC NC VDDQ VSS NC I/OP1 I/O7 I/O6 VSS VDDQ I/O5 I/O4 VSS VDD(1) VDD ZZ I/O3 I/O2 VDDQ VSS I/O1 I/O0 NC NC VSS VDDQ NC NC NC
5313 drw 02a
VTERM(3,6) VTERM(4,6) VTERM(5,6) TA(7) TBIAS TSTG PT IOUT
C C C
o
o
W mA
5313 tbl 06
,
NOTES: 1. Pins 14, 16, and 66 do not have to be connected directly to VDD as long as the input voltage is VIH. 2. Pins 38, 39 and 43 will be pulled internally to VDD if not actively driven. To disable the TAP controller without interfering with normal operation, several settings are possible. Pins 38, 39 and 43 could be tied to VDD or VSS and pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK) pins 38, 39 and 43 could be left unconnected "NC" and the JTAG circuit will remain disabled from power up. 3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin TQFP package for the 36M ZBT device.
Top View 100 TQFP
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD terminals only. 3. VDDQ terminals only. 4. Input terminals only. 5. I/O terminals only. 6. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up. 7. TA is the "instant on" case temperature.
NC / TDO(2) NC / TCK(2,3)
LBO A5 A4 A3 A2 A1 A0
NC / TMS(2) NC / TDI(2) VSS VDD
A11 A12 A13 A14 A15 A16
A17
100-Pin TQFP Capacitance
(TA = +25C, f = 1.0MHz)
Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 5 7 Unit pF pF
5313 tbl 07
165 fBGA Capacitance
(TA = +25C, f = 1.0MHz)
Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 7 7 Unit pF pF
5313 tbl 07b
119 BGA Capacitance
(TA = +25C, f = 1.0MHz)
Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 7 7 Unit pF pF
5313 tbl 07a
NOTE: 1. This parameter is guaranteed by device characterization, but not production tested.
6.42 5
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Pin Configuration 512K X 36,3 1194BGA(1,2) 1 2 5 Top View A A A A A VDDQ
6 4 18 8
6 A16 CE2 A15 I/OP2 I/O13 I/O12 I/O11 I/O9 VDD I/O6 I/O4 I/O3 I/O2 I/O0 A13 NC
(3)
7 VDDQ NC NC I/O15 I/O14 VDDQ I/O10 I/O8 VDDQ I/O7 I/O5 VDDQ I/O1 I/OP1 NC ZZ VDDQ
5313 tbl 25
B C D E F G H J K L M N P R T U
NC NC I/O16 I/O17 VDDQ I/O20 I/O22 VDDQ I/O24 I/O25 VDDQ I/O29 I/O31 NC NC VDDQ
CE2 A7 I/OP3 I/O18 I/O19 I/O21 I/O23 VDD I/O26 I/O27 I/O28 I/O30 I/OP4 A5 NC
NC/TMS (2)
A3 A2 VSS VSS VSS BW3 VSS VDD
(1)
ADV/LD VDD NC CE1 OE A17 R/W VDD CLK NC CEN A1 A0 VDD A11
(2)
A9 A12 VSS VSS VSS BW2 VSS VDD
(1)
VSS BW4 VSS VSS VSS LBO A10 NC/TDI
VSS BW1 VSS VSS VSS VDD
(1)
A14
(2)
NC/TCK
NC/TDO
(2)
NC/TRST(2,4)
Pin Configuration 1M X 18, 119 BGA(1,2) 1 2 3 4 5 Top View
A B C D E F G H J K L M N P R T U VDDQ NC NC I/O8 NC VDDQ NC I/O11 VDDQ NC I/O13 VDDQ I/O15 NC NC NC VDDQ A6 CE 2 A7 NC I/O9 NC I/O10 NC VDD I/O12 NC I/O14 NC I/OP2 A5 A10
NC/TMS
(2)
6 A16 CE2 A17 I/O7 NC I/O5 NC I/O3 VDD NC I/O1 NC I/O0 NC A12 A11
(2)
7 VDDQ NC NC NC I/O6 VDDQ I/O4 NC VDDQ I/O2 NC VDDQ NC I/OP1 NC ZZ
(2,4)
A4 A3 A2 VSS VSS VSS BW2 VSS VDD(1) VSS VSS VSS VSS VSS LBO A15 NC/TDI
(2)
A19 ADV/LD VDD NC CE1 OE A18 R/W VDD CLK NC CEN A1 A0 VDD NC
(3)
A8 A9 A13 VSS VSS VSS VSS VSS VDD(1) VSS BW1 VSS VSS VSS VDD
(1)
A14
(2)
NC/TCK
NC/TDO
NC/TRST
VDDQ
5313 tb l 25a
NOTES: 1. J3, R5, and J5 do not have to be directly connected to VDD as long as the input voltage is VIH. 2. U2, U3, U4 and U6 will be pulled internally to VDD if not actively driven. To disable the TAP controller without interfering with normal operation, several settings are possible. U2, U3, U4 and U6 could be tied to VDD or VSS and U5 should be left unconnected. Or all JTAG inputs(TMS, TDI, and TCK and TRST) U2, U3, U4 and U6 could be left unconnected "NC" and the JTAG circuit will remain disabled from power up. 3. The 36M address will be ball T6 (for the 512K x 36 device) and ball T4 (for the 1M x 18 device). 4. TRST is offered as an optional JTAG reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
6.42 6
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Synchronous Truth Table(1)
CEN L L L L L L H R/W L H X X X X X Chip(5) Enable Select Select X X Deselect X X ADV/LD L L H H L H X BWx Valid X Valid X X X X ADDRESS USED External External Internal Internal X X X PREVIOUS CYCLE X X LOAD WRITE / BURST WRITE LOAD READ / BURST READ X DESELECT / NOOP X CURRENT CYCLE LOAD WRITE LOAD READ BURST WRITE (Advance burst counter)(2) BURST READ (Advance burst counter)(2) DESELECT or STOP(3) NOOP SUSPEND(4) I/O (2 cycles later) D(7) Q(7) D(7) Q(7) HiZ HiZ Previous Value
5313 tbl 08
NOTES: 1. L = VIL, H = VIH, X = Don't Care. 2. When ADV/LD signal is sampled high, the internal burst counter is incremented. The R/W signal is ignored when the counter is advanced. Therefore the nature of the burst cycle (Read or Write) is determined by the status of the R/W signal when the first address is loaded at the beginning of the burst cycle. 3. Deselect cycle is initiated when either (CE1, or CE2 is sampled high or CE2 is sampled low) and ADV/LD is sampled low at rising edge of clock. The data bus will tri-state two cycles after deselect is initiated. 4. When CEN is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part. The state of all the internal registers and the I/Os remains unchanged. 5. To select the chip requires CE1 = L, CE2 = L, CE2 = H on these chip enables. Chip is deselected if any one of the chip enables is false. 6. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up. 7. Q - Data read from the device, D - data written to the device.
Partial Truth Table for Writes(1)
OPERATION READ WRITE ALL BYTES WRITE BYTE 1 (I/O[0:7], I/OP1)
(2) (2)
R/W H L L L L L L
BW1 X L L H H H H
BW2 X L H L H H H
BW3(3) X L H H L H H
BW4(3) X L H H H L H
5313 tbl 09
WRITE BYTE 2 (I/O[8:15], I/OP2)
WRITE BYTE 3 (I/O[16:23], I/OP3)(2,3) WRITE BYTE 4 (I/O[24:31], I/OP4)(2,3) NO WRITE
NOTES: 1. L = VIL, H = VIH, X = Don't Care. 2. Multiple bytes may be selected during the same cycle. 3. N/A for X18 configuration.
6.42 7
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Interleaved Burst Sequence Table (LBO=VDD)
Sequence 1 A1 First Address Second Address Third Address Fourth Address
(1)
Sequence 2 A1 0 0 1 1 A0 1 0 1 0
Sequence 3 A1 1 1 0 0 A0 0 1 0 1
Sequence 4 A1 1 1 0 0 A0 1 0 1 0
5313 tbl 10
A0 0 1 0 1
0 0 1 1
NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Linear Burst Sequence Table (LBO=VSS)
Sequence 1 A1 First Address Second Address Third Address Fourth Address (1) 0 0 1 1 A0 0 1 0 1 Sequence 2 A1 0 1 1 0 A0 1 0 1 0 Sequence 3 A1 1 1 0 0 A0 0 1 0 1 Sequence 4 A1 1 0 0 1 A0 1 0 1 0
5313 tbl 11
NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Functional Timing Diagram(1)
CYCLE CLOCK ADDRESS
(2)
n+29
n+30
n+31
n+32
n+33
n+34
n+35
n+36
n+37
A29
A30
A31
A32
A33
A34
A35
A36
A37
(A0 - A18) CONTROL
(2)
C29
C30
C31
C32
C33
C34
C35
C36
C37
(R/W, ADV/LD, BWx) DATA
(2)
D/Q27
D/Q28
D/Q29
D/Q30
D/Q31
D/Q32
D/Q33
D/Q34
D/Q35
I/O[0:31], I/O P[1:4]
5313drw 03
,
NOTES: 1. This assumes CEN, CE1, CE2, CE2 are all true. 2. All Address, Control and Data_In are only required to meet set-up and hold time with respect to the rising edge of clock. Data_Out is valid after a clock-to-data delay from the rising edge of clock.
6.42 8
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Device Operation - Showing Mixed Load, Burst, Deselect and NOOP Cycles(2)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11 n+12 n+13 n+14 n+15 n+16 n+17 n+18 n+19 Address A0 X A1 X X A2 X X A3 X A4 X X A5 A6 A7 X A8 X A9 R/W H X H X X H X X L X L X X L H L X H X L ADV/LD L H L L H L H L L H L L H L L L H L H L CE(1) L X L H X L X H L X L H X L L L X L X L CEN L L L L L L L L L L L L L L L L L L L L BWx X X X X X X X X L L L X X L X L L X X L OE X X L L L X X L L X X X X X X X L X X L I/O X X Q0 Q0+1 Q1 Z Z Q2 Q2+1 Z D3 D3+1 D4 Z Z D5 Q6 D7 D7+1 Q8 Comments Load read Burst read Load read Deselect or STOP NOOP Load read Burst read Deselect or STOP Load write Burst write Load write Deselect or STOP NOOP Load write Load read Load write Burst write Load read Burst read Load write
5313 tbl 12
NOTES: 1. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L. 2. H = High; L = Low; X = Don't Care; Z = High Impedance.
Read Operation(1)
Cycle n n+1 n+2 Address A0 X X R/W H X X ADV/LD L X X CE(2) L X X CEN L L X BWx X X X OE X X L I/O X X Q0 Comments Address and Control meet setup Clock Setup Valid Contents of Address A0 Read Out
5313 tbl 13
NOTES: 1. H = High; L = Low; X = Don't Care; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42 9
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Burst Read Operation(1)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 Address A0 X X X X A1 X X A2 R/W H X X X X H X X H ADV/LD L H H H H L H H L CE(2) L X X X X L X X L CEN L L L L L L L L L BWx X X X X X X X X X OE X X L L L L L L L I/O X X Q0 Q0+1 Q0+2 Q0+3 Q0 Q1 Q1+1 Comments Address and Control meet setup Clock Setup Valid, Advance Counter Address A0 Read Out, Inc. Count Address A0+1 Read Out, Inc. Count Address A0+2 Read Out, Inc. Count Address A0+3 Read Out, Load A1 Address A0 Read Out, Inc. Count Address A1 Read Out, Inc. Count Address A1+1 Read Out, Load A2
5313 tbl 14
NOTES: 1. H = High; L = Low; X = Don't Care; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation(1)
Cycle n n+1 n+2 Address A0 X X R/W L X X ADV/LD L X X CE(2) L X X CEN L L L BWx L X X OE X X X I/O X X D0 Comments Address and Control meet setup Clock Setup Valid Write to Address A0
5313 tbl 15
NOTES: 1. H = High; L = Low; X = Don't Care; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Burst Write Operation(1)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 Address A0 X X X X A1 X X A2 R/W L X X X X L X X L ADV/LD L H H H H L H H L CE(2) L X X X X L X X L CEN L L L L L L L L L BWx L L L L L L L L L OE X X X X X X X X X I/O X X D0 D0+1 D0+2 D0+3 D0 D1 D1+1 Comments Address and Control meet setup Clock Setup Valid, Inc. Count Address A0 Write, Inc. Count Address A0+1 Write, Inc. Count Address A0+2 Write, Inc. Count Address A0+3 Write, Load A1 Address A0 Write, Inc. Count Address A1 Write, Inc. Count Address A1+1 Write, Load A2
5313 tbl 16
NOTES: 1. H = High; L = Low; X = Don't Care; ? = Don't Know; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42 10
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Read Operation with Clock Enable Used(1)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 Address A0 X A1 X X A2 A3 A4 R/W H X H X X H H H ADV/LD L X L X X L L L CE(2) L X L X X L L L CEN L H L H H L L L BWx X X X X X X X X OE X X X L L L L L I/O X X X Q0 Q0 Q0 Q1 Q2 Comments Address and Control meet setup Clock n+1 Ignored Clock Valid Clock Ignored. Data Q0 is on the bus. Clock Ignored. Data Q0 is on the bus. Address A0 Read out (bus trans.) Address A1 Read out (bus trans.) Address A2 Read out (bus trans.)
5313 tbl 17
NOTES: 1. H = High; L = Low; X = Don't Care; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation with Clock Enable Used(1)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 Address A0 X A1 X X A2 A3 A4 R/W L X L X X L L L ADV/LD L X L X X L L L CE(2) L X L X X L L L CEN L H L H H L L L BWx L X L X X L L L OE X X X X X X X X I/O X X X X X D0 D1 D2 Comments Address and Control meet setup. Clock n+1 Ignored. Clock Valid. Clock Ignored. Clock Ignored. Write Data D0 Write Data D1 Write Data D2
5313 tbl 18
NOTES: 1. H = High; L = Low; X = Don't Care; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42 11
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used(1)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 Address X X A0 X A1 X X A2 X X R/W X X H X H X X H X X ADV/LD L L L L L L L L L L CE(2) H H L H L H H L H H CEN L L L L L L L L L L BWx X X X X X X X X X X OE X X X X L X L X X L I/O(3) ? ? Z Z Q0 Z Q1 Z Z Q2 Comments Deselected. Deselected. Address and Control meet setup. Deselected or STOP. Address A0 Read out. Load A1. Deselected or STOP. Address A1 Read out. Deselected. Address and control meet setup. Deselected or STOP. Address A2 Read out. Deselected.
5313 tbl 19
NOTES: 1. H = High; L = Low; X = Don't Care; ? = Don't Know; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L. 3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used(1)
Cycle n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 Address X X A0 X A1 X X A2 X X R/W X X L X L X X L X X ADV/LD L L L L L L L L L L CE(2) H H L H L H H L H H CEN L L L L L L L L L L BWx X X L X L X X L X X OE X X X X X X X X X X I/O ? ? Z Z D0 Z D1 Z Z D2 Comments Deselected. Deselected. Address and Control meet setup. Deselected or STOP. Address D0 Write in. Load A1. Deselected or STOP. Address D1 Write in. Deselected. Address and control meet setup. Deselected or STOP. Address D2 Write in. Deselected.
5313 tbl 20
NOTES: 1. H = High; L = Low; X = Don't Care; ? = Don't Know; Z = High Impedance. 2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42 12
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V5%)
Symbol |ILI| |ILI| |ILO| VOL VOH Parameter Input Leakage Current LBO, JTAG and ZZ Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage
(1)
Test Conditions VDD = Max., VIN = 0V to VDD VDD = Max., VIN = 0V to VDD VOUT = 0V to VDDQ, Device Deselected IOL = +6mA, VDD = Min. IOH = -6mA, VDD = Min.
Min.
___
Max. 5 30 5 0.4
___
Unit A A A V V
5313 tbl 21
___ ___ ___
2.0
NOTE: 1. The LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD, and the ZZ pin will be internally pulled to VSS if they are not actively driven in the application.
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) (VDD = 2.5V5%)
225MHz Symbol Parameter Operating Power Supply Current Test Conditions Com'l Only Com'l Only IDD Device Selected, Outputs Open, ADV/LD = X, VDD = Max., VIN > VIH or < VIL, f = fMAX(2) Device Deselected, Outputs Open, VDD = Max., VIN > VHD or < VLD, f = 0(2,3) Device Deselected, Outputs Open, VDD = Max., VIN > VHD or < VLD, f = fMAX(2.3) Device Selected, Outputs Open, CEN > VIH, VDD = Max., VIN > VHD or < VLD, f = fMAX(2,3) Device Selected, Outputs Open, CEN < VIH, VDD = Max., VIN > VHD or < VLD, f = fMAX(2,3),ZZ > VHD 315 275 Com'l 245 Ind 265 Com'l 215 Ind 235 Com'l 195 Ind 215 Com'l 175 Ind 195 mA 200MHz 166MHz 150MHz 133MHz 100MHz Unit
ISB1
CMOS Standby Power Supply Current
40
40
40
60
40
60
40
60
40
60
mA
ISB2
Clock Running Power Supply Current
90
80
70
90
60
80
50
70
45
65
mA
ISB3
Idle Power Supply Current
60
60
60
80
60
80
60
80
60
80
mA
IZZ
Full Sleep Mode Supply Current
40
40
40
60
40
60
40
60
40
60
mA
5313 tbl 22
NOTES: 1. All values are maximum guaranteed values. 2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC; f=0 means no input lines are changing. 3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
AC Test Load
I/O
6 5 4 tCD 3 (Typical, ns) 2 1
VDDQ/2 50 Z0 = 50
5313 drw 04
AC Test Conditions
Input Pulse Levels 0 to 2.5V 2ns (VDDQ/2) (VDDQ/2) See Figure 1
5313 tbl 23
,
Input Rise/Fall Times Input Timing Reference Levels Output Timing Reference Levels AC Test Load
Figure 1. AC Test Load
* * * **
80 100 Capacitance (pF) 200
5313 drw 05
20 30 50
,
Figure 2. Lumped Capacitive Load, Typical Derating
6.42 13
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
AC Electrical Characteristics (VDD = 2.5V +/-5%, Commercial and Industrial
Temperature Ranges)
Symbol 225MHz Parameter Min. Max. 200MHz Min. Max. 166MHz Min. Max. 150MHz Min. Max. 133MHz Min. Max. 100MHz Min. Max. Unit
tCYC tF
(1)
Clock Cycle Time Clock Frequency Clock High Pulse Width Clock Low Pulse Width
4.4
____
____
5
____
____
6
____
____
6.7
____
____
7.5
____
____
10
____
____
ns MHz ns ns
225
____
200
____
166
____
150
____
133
____
100
____
tCH(2) tCL
(2)
1.8 1.8
1.8 1.8
1.8 1.8
2.0 2.0
2.2 2.2
3.2 3.2
____
____
____
____
____
____
Output Parameters tCD tCDC tCLZ(3,4,5) tCHZ(3,4,5) tOE tOLZ(3,4) tOHZ(3,4) Clock High to Valid Data Clock High to Data Change Clock High to Output Active Clock High to Data High-Z Output Enable Access Time Output Enable Low to Data Active Output Enable High to Data High-Z
____
3.0
____
____
3.2
____
____
3.5
____
____
3.8
____
____
4.2
____
____
5
____
ns ns ns ns ns ns ns
1.0 1.0 1.0
____
1.0 1.0 1.0
____
1.0 1.0 1.0
____
1.5 1.5 1.5
____
1.5 1.5 1.5
____
1.5 1.5 1.5
____
____
____
____
____
____
____
3 3.0
____
3 3.2
____
3 3.5
____
3 3.8
____
3 4.2
____
3.3 5
____
0
____
0
____
0
____
0
____
0
____
0
____
3.0
3.2
3.5
3.8
4.2
5
Set Up Times tSE tSA tSD tSW tSADV tSC tSB Hold Times tHE tHA tHD tHW tHADV tHC tHB Clock Enable Hold Time Address Hold Time Data In Hold Time Read/Write (R/W) Hold Time Advance/Load (ADV/LD) Hold Time Chip Enable/Select Hold Time Byte Write Enable (BWx) Hold Time 0.4 0.4 0.4 0.4 0.4 0.4 0.4
____ ____ ____ ____ ____
Clock Enable Setup Time Address Setup Time Data In Setup Time Read/Write (R/W) Setup Time Advance/Load (ADV/LD) Setup Time Chip Enable/Select Setup Time Byte Write Enable (BWx) Setup Time
1.4 1.4 1.4 1.4 1.4 1.4 1.4
____ ____
1.4 1.4 1.4 1.4 1.4 1.4 1.4
____ ____
1.5 1.5 1.5 1.5 1.5 1.5 1.5
____ ____
1.5 1.5 1.5 1.5 1.5 1.5 1.5
____ ____
1.7 1.7 1.7 1.7 1.7 1.7 1.7
____ ____
2.0 2.0 2.0 2.0 2.0 2.0 2.0
____ ____
ns ns ns ns ns ns ns
____
____
____
____
____
____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
0.4 0.4 0.4 0.4 0.4 0.4 0.4
____ ____ ____ ____ ____
0.5 0.5 0.5 0.5 0.5 0.5 0.5
____ ____ ____ ____ ____
0.5 0.5 0.5 0.5 0.5 0.5 0.5
____ ____ ____ ____ ____
0.5 0.5 0.5 0.5 0.5 0.5 0.5
____ ____ ____ ____ ____
0.5 0.5 0.5 0.5 0.5 0.5 0.5
____ ____ ____ ____ ____
ns ns ns ns ns ns ns
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
5313 tbl 24 NOTES: 1. tF = 1/tCYC. 2. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ. 3. Transition is measured 200mV from steady-state. 4. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested. 5. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is faster than tCLZ (device turn-on) at a given temperature and voltage. The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 2.625V) than tCHZ, which is a Max. parameter (worse case at 70 deg. C, 2.375V).
6.42 14
tCYC
CLK tSE tHE tCH tCL
CEN tSADV tHADV
ADV/LD tSW tHW
R/W tSA tHA A2 tSC tHC
ADDRESS
A1
CE1, CE2
(2)
Timing Waveform of Read Cycle(1,2,3,4)
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
6.42 15
tCLZ tCD Q(A1) Pipeline Read Pipeline Read Q(A2) tCDC tCDC tCD Q(A2+1)
(CEN high, eliminates current L-H clock edge) (Burst Wraps around to initial state)
BW1 - BW4
OE tCHZ Q(A2+2) Burst Pipeline Read
5313 drw 06
DATAOUT
Q(A2+2)
Q(A2+3)
Q(A2)
NOTES: 1. Q (A1) represents the first output from the external address A1. Q (A2) represents the first output from the external address A2; Q (A2+1) represents the next output data in the burst sequence of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input. 2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH. 3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW. 4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control are loaded into the SRAM.
. ,
tCYC
CLK tSE tHE tCH tCL
CEN tSADV tHADV
ADV/LD tSW tHW
R/W tSA A1 tSC tHC tHA A2
ADDRESS
CE1, CE2 tSB tHB
(2)
Timing Waveform of Write Cycles(1,2,3,4,5)
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
6.42 16
tSD tHD D(A2) D(A1)
Pipeline Write Pipeline Write
BW1 - BW4
OE
(CEN high, eliminates current L-H clock edge)
tSD D(A2+1)
Burst Pipeline Write
tHD D(A2+2)
(Burst Wraps around to initial state)
DATAIN
D(A2+3)
D(A2)
5313 drw 07
NOTES: 1. D (A1) represents the first input to the external address A1. D (A2) represents the first input to the external address A2; D (A2+1) represents the next input data in the burst sequence of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input. 2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH. 3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW. 4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control are loaded into the SRAM. 5. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before the actual data is presented to the SRAM.
. ,
tCYC
CLK tSE tHE tCH tCL
CEN tHADV
tSADV
ADV/LD tSW tHW
R/W tSA tHA A2 A3 A6 A4 A5 A7 tSC tHC tSB tHB A8 A9
ADDRESS
A1
CE1, CE2(2)
Timing Waveform of Combined Read and Write Cycles(1,2,3)
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
6.42 17
tSD tHD D(A2) Write tCD Q(A1) Read Read tCHZ tCLZ Q(A3) Write tCDC D(A4)
BW1 - BW4
OE
DATAIN
D(A5)
DATAOUT
Q(A6) Read
Q(A7)
5313 drw 08
NOTES: 1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2. 2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH. 3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before the actual data is presented to the SRAM.
,
,
tCYC
CLK tSE tHE tCH tCL
CEN
tSADV
tHADV
ADV/LD tSW tHW
R/W tSA tHA A2 A3 tSC tHC tSB tHB B(A2) A4 A5
ADDRESS
A1
CE1, CE2(2)
Timing Waveform of CEN Operation(1,2,3,4)
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
6.42 18
tCHZ tCD Q(A1) tCLZ tCDC Q(A1)
BW1 - BW4
OE tSD tHD D(A2)
DATAIN
DATAOUT
Q(A3)
5313 drw 09
NOTES: 1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2. 2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH. 3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not occur. All internal registers in the SRAM will retain their previous state. 4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before the actual data is presented to the SRAM.
,
tCYC
CLK tSE tHE tCH tCL
CEN tSADV tHADV
ADV/LD tSW tHW
R/W tSA A1 tSC tHC tHA A2 A3 A4 A5
ADDRESS
CE1, CE2 tSB tHB
(2)
Timing Waveform of CS Operation(1,2,3,4)
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
6.42 19
tCD tCLZ Q(A1) tCHZ tCDC Q(A2)
BW1 - BW4
OE tSD tHD D(A3)
DATAIN
DATAOUT
Q(A4)
5313 drw 10
NOTES: 1. Q (A1) represents the first output from the external address A1. D (A3) represents the input data to the SRAM corresponding to address A3. 2 CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH. 3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not occur. All internal registers in the SRAM will retain their previous state. 4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before the actual data is presented to the SRAM.
,
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
JTAG Interface Specification
tJF TCK tJCYC tJR
tJCL
tJCH
Device Inputs(1)/ TDI/TMS tJS Device Outputs(2)/ TDO tJH tJDC
tJRSR
tJCD x
M5313 drw 01
TRST(3) tJRST
NOTES: 1. Device inputs = All device inputs except TDI, TMS and TRST. 2. Device outputs = All device outputs except TDO. 3. During power up, TRST could be driven low or not be used since the JTAG circuit resets automatically. TRST is an optional JTAG reset.
JTAG AC Electrical Characteristics(1,2,3,4)
Symbol tJCYC tJCH tJCL tJR tJF tJRST tJRSR tJCD tJDC tJS tJH Parameter JTAG Clock Input Period JTAG Clock HIGH JTAG Clock Low JTAG Clock Rise Time JTAG Clock Fall Time JTAG Reset JTAG Reset Recovery JTAG Data Output JTAG Data Output Hold JTAG Setup JTAG Hold Min. 100 40 40
____ ____
Max.
____ ____ ____
Units ns ns ns ns ns ns ns ns ns ns ns
I5313 tbl 01
Scan Register Sizes
Register Name Instruction (IR) Bypass (BYR) JTAG Identification (JIDR) Boundary Scan (BSR) Bit Size 4 1 32 Note (1)
I5313 tbl 03
5(1) 5(1)
____ ____
50 50
____
20
____ ____ ____
NOTE: 1. The Boundary Scan Descriptive Language (BSDL) file for this device is available by contacting your local IDT sales representative.
0 25 25
NOTES: 1. Guaranteed by design. 2. AC Test Load (Fig. 1) on external output signals. 3. Refer to AC Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.
6.42 20
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
JTAG Identification Register Definitions
Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) Value 0x2 0x220, 0x222 0x33 1 Reserved for version number. Define s IDT part number 71T75602 and 71T75802, respectively. Allows unique identification of device vendor as IDT. Indicates the presence of an ID register.
I5313 tbl 02
Description
Available JTAG Instructions
Instruction EXTEST Description Forces contents of the bound ary scan cells onto the device outputs (1). Places the boundary scan registe r (BSR) between TDI and TDO. Places the boundary scan registe r (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) and outputs(1) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the bo undary scan cells via the TDI. Loads the JTAG ID register (JIDR) with the vendor ID code and places the register between TDI and TDO. Places the bypass register (BYR) be tween TDI and TDO. Forces all device o utput drivers to a High-Z state. OPCODE 0000
SAMPLE/PRELOAD
0001
DEVICE_ID HIGHZ RESERVED RESERVED RESERVED RESERVED CLAMP RESERVED RESERVED
0010 0011 0100
Several combinations are reserved. Do not use codes other than those identified for EXTEST, SAMPLE/PRELOAD, DEVICE_ID, HIGHZ, CLAMP, VALIDATE and BYPASS instructions.
0101 0110 0111
Uses BYR. Forces contents of the bound ary scan cells onto the device outputs. Places the byp ass registe r (BYR) between TDI and TDO.
1000 1001 1010
Same as above. RESERVED RESERVED VALIDATE RESERVED BYPASS Automatically loaded into the instruction register whenever the TAP controller passes through the CAPTURE-IR state. The lower two bits '01' are mand ated by the IEEE std. 1149.1 specification. Same as above. The BYPASS instruction is used to truncate the boundary scan register as a single bit in length. 1011 1100 1101 1110 1111
I5313 tbl 04
NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, and TRST.
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IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
100-Pin Thin Quad Flatpack (TQFP) Package Diagram Outline
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IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
119 Ball Grid Array (BGA) Package Diagram Outline
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IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Timing Waveform of OE Operation(1)
OE tOE tOHZ tOLZ Valid
5313 drw 11
DATAOUT
,
NOTE: 1. A read operation is assumed to be in progress.
Ordering Information
IDT XXXX Device Type S Power XX Speed XX Package Blank I PF BG 225 200 166 150 133 100 Commercial (0C to +70C) Industrial (-40C to +85C) 100-Pin Plastic Thin Quad Flatpack (TQFP) 119 Ball Grid Array (BGA) X
Clock Frequency in Megahertz
IDT71T75602 512Kx36 Pipelined ZBT SRAM IDT71T75802 1Mx18 Pipelined ZBT SRAM
5313 drw 12
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IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBTTM SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Datasheet Document History
Rev 0 1 Date 04/20/00 05/25/00 Description Created New Datasheet Pg.1,14,15,25 Added 166MHz speed grade offering Pg. 1,2,14 Corrected error in ZZ Sleep Mode Pg. 23 AddBQ165 Package Diagram Outline Pg. 24 Corrected 119BGA Package Diagram Outline. Pg. 25 Corrected topmark on ordering information Pg. 1,2,24 Removed reference of BQ165 Package Pg. 7 Removed page of the 165 BGA pin configuration Pg. 23 Removed page of the 165 BGA package diagram outline Pg. 6 Corrected 3.3V to 2.5V in Note 2 Pg. 13 Improved DC Electrical characteristics-parameters improved: Icc, ISB2, ISB3, IZZ. Pg. 4-6 Added clarification to JTAG pins, allow for NC. Added 36M address pin locations. Pg. 14 Revised 166MHz tCDC(min), tCLZ(min) and tCHZ(min) to 1.0ns Pg. 1-3,6,13,20,21 Added complete JTAG functionality. Pg. 2,13 Added notes for ZZ pin internal pulldown and ZZ leakage current. Pg. 13,14,24 Added 200MHz and 225MHz to DC and AC Electrical Characteristics. Updated supply current for Idd, ISB1, ISB3 and Izz. Pg.1-24 Changed datasheet from Advanced Information to final release. Pg.13 Updated DC Electrical characteristics temperature and voltage range table. Pg.4,5,13,14,24 Added I-temp to the datasheet. Pg.5 Updated 165 BGA Capacitance table. Pages
2
08/23/01
3 4 5
10/16/01 10/29/01 12/21/01 06/07/02
6 7
11/19/02 05/23/03
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com
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for Tech Support: sramhelp@idt.com 800-544-7726, x4033
The IDT logo is a registered trademark of Integrated Device Technology, Inc. All brands or products are the trademarks or registered trademarks of their respective owners. ZBT(R) and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.

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